TW083U65C,RQ
TW083U65C,RQ
  • image of TW083U65C,RQ
  • image of TW083U65C,RQ

TW083U65C,RQ

Category:
-
Manufacturer:
Description:
N-CH SIC MOSFET, 650 V, 0.083 (T
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$25.36

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Grade
-
Qualification
-
Current - Continuous Drain (Id) @ 25°C
28A (Tc)
Drain to Source Voltage (Vdss)
650 V
Power Dissipation (Max)
111W (Tc)
Operating Temperature
175°C
Technology
SiCFET (Silicon Carbide)
Vgs (Max)
+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)
18V
Package / Case
8-PowerSFN
Supplier Device Package
TOLL
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 18 V
Vgs(th) (Max) @ Id
5V @ 600µA
Input Capacitance (Ciss) (Max) @ Vds
873 pF @ 400 V
Rds On (Max) @ Id, Vgs
124mOhm @ 15A, 18V