SIR580DP-T1-BE3
  • image of SIR580DP-T1-BE3

SIR580DP-T1-BE3

Category:
-
Manufacturer:
Description:
N-CHANNEL 80 V (D-S) MOSFET 150C
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$3.09

Request a Quote

Stock 7600

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-
AM4N65P
MOSFET N-CH 650V 4A TO-220
AMB481P
MOSFET P-CH 80V 3.1A DFN1.6X1.6
Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs
76 nC @ 10 V
Drain to Source Voltage (Vdss)
80 V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 20A, 10V
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Power Dissipation (Max)
6.25W (Ta), 104W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Current - Continuous Drain (Id) @ 25°C
35.8A (Ta), 146A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
4100 pF @ 40 V