SIJ5623DP-T1-GE3
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SIJ5623DP-T1-GE3

Category:
-
Manufacturer:
Description:
P-CHANNEL 60 V (D-S) MOSFET 150C
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$2.61

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Specifications
Part Status
Active
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
60 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs(th) (Max) @ Id
2.6V @ 250µA
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Rds On (Max) @ Id, Vgs
24mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds
1575 pF @ 30 V
Current - Continuous Drain (Id) @ 25°C
9.3A (Ta), 26.1A (Tc)
Power Dissipation (Max)
4.1W (Ta), 32.9W (Tc)