SIHG125N65E-GE3
  • image of SIHG125N65E-GE3

SIHG125N65E-GE3

Category:
-
Manufacturer:
Description:
E SERIES POWER MOSFET 650 V (D-
Package:
Packaging:
Tube
RoHS：
YES
Price:
$9.87

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Specifications
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-247AC
Package / Case
TO-247-3
Current - Continuous Drain (Id) @ 25°C
27A (Tc)
Vgs (Max)
±30V
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 10 V
Drain to Source Voltage (Vdss)
650 V
Vgs(th) (Max) @ Id
5V @ 250µA
Power Dissipation (Max)
208W (Tc)
Rds On (Max) @ Id, Vgs
120mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds
1938 pF @ 100 V