SIEH4800EW-T1-GE3
SIEH4800EW-T1-GE3
  • image of SIEH4800EW-T1-GE3
  • image of SIEH4800EW-T1-GE3

SIEH4800EW-T1-GE3

Category:
-
Manufacturer:
Description:
N-CHANNEL 80 V (D-S) 175 C MOSFE
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$6.8

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Drain to Source Voltage (Vdss)
80 V
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Gate Charge (Qg) (Max) @ Vgs
278 nC @ 10 V
Rds On (Max) @ Id, Vgs
1.15mOhm @ 20A, 10V
Package / Case
8-PowerDFN
Current - Continuous Drain (Id) @ 25°C
34A (Ta), 381A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
29000 pF @ 40 V
Power Dissipation (Max)
3.4W (Ta), 417W (Tc)
Supplier Device Package
PowerPAK® 8 x 8 BWL