RQ3P270BLFRATCB
RQ3P270BLFRATCB
  • image of RQ3P270BLFRATCB
  • image of RQ3P270BLFRATCB

RQ3P270BLFRATCB

Category:
-
Manufacturer:
Description:
NCH 100V 27A, HSMT8AG, POWER MOS
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$2.16

Request a Quote

Stock 4600

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-
AM4N65P
MOSFET N-CH 650V 4A TO-220
AMB481P
MOSFET P-CH 80V 3.1A DFN1.6X1.6
Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Vgs (Max)
±20V
FET Feature
-
Grade
Automotive
Qualification
AEC-Q101
Operating Temperature
150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
27A (Tc)
Power Dissipation (Max)
69W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Package / Case
8-PowerVDFN
Vgs(th) (Max) @ Id
4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
13.6 nC @ 10 V
Supplier Device Package
8-HSMT (3.2x3)
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 50 V
Rds On (Max) @ Id, Vgs
29mOhm @ 27A, 10V