FCP165N65S3R0
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FCP165N65S3R0

Category:
-
Manufacturer:
Description:
FCP165N65S3R0 - POWER MOSFET, N-
Package:
Packaging:
Bulk
RoHS：
YES
Price:
$2.2

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Specifications
Part Status
Obsolete
Mounting Type
Through Hole
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Grade
-
Qualification
-
Package / Case
TO-220-3
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-220-3
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Vgs (Max)
±30V
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Drain to Source Voltage (Vdss)
650 V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 400 V
Rds On (Max) @ Id, Vgs
165mOhm @ 9.5A, 10V
Power Dissipation (Max)
154W (Tc)
Vgs(th) (Max) @ Id
4.5V @ 440mA