VS-3C10ED07T-M3/I
VS-3C10ED07T-M3/I
  • image of VS-3C10ED07T-M3/I
  • image of VS-3C10ED07T-M3/I

VS-3C10ED07T-M3/I

Category:
-
Manufacturer:
Description:
RF DIODE SCHOTTKY 650V 81W SMPD
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$4.14

Request a Quote

Stock 3579

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
RN242SMFHT2R
ROHM Semiconductor
30V 100MA, SINGLE, LOW RF PIN DI
RN242SMT2R
ROHM Semiconductor
30V 100MA, SINGLE, LOW RF PIN DI
BAP50-03
Shenzhen Slkormicro Semicon Co., Ltd.
INDEPENDENT TYPE 50MA 50V 1.1V@5
BAP51-02
Shenzhen Slkormicro Semicon Co., Ltd.
INDEPENDENT TYPE 50MA 60V 1.1V@5
VS-3C02EJ07-M3/H
RECTIFIER, SIC, 650V, 2A, SINGLE
VS-3C01EJ12-M3/H
RECTIFIER, SIC, 1200V, 1A, SINGL
VS-3C02EJ12-M3/H
RECTIFIER, SIC, 1200V, 2A, SINGL
TPM2872
SILICON SCHOTTKY DIODE. DNMICRON
TPM3810B-16
"RF PIN LIMITER DIODES. THE TPM3
TPM3810B-03
RF PIN LIMITER DIODES. THE TPM38
Specifications
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Current - Max
10 A
Diode Type
Schottky - Single
Resistance @ If, F
-
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), Variant
Supplier Device Package
SMPD
Capacitance @ Vr, F
43pF @ 400V, 1MHz
Voltage - Peak Reverse (Max)
650V
Power Dissipation (Max)
81 W