BSDD10S65E6
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BSDD10S65E6

Category:
-
Manufacturer:
Description:
DIODE SIL CARBIDE 650V 10A TO252
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$5.04

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Specifications
Part Status
Active
Mounting Type
Surface Mount
Operating Temperature - Junction
-55°C ~ 175°C
Current - Average Rectified (Io)
10A
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package
TO-252 (DPAK)
Technology
SiC (Silicon Carbide) Schottky
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Capacitance @ Vr, F
500pF @ 1V, 1MHz
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Reverse Leakage @ Vr
50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If
1.45 V @ 10 A