BIDW75N65ES5
  • image of BIDW75N65ES5

BIDW75N65ES5

Category:
-
Manufacturer:
Description:
IGBT TRENCH FS 650V 150A TO-247
Package:
Packaging:
Tube
RoHS：
YES
Price:
$8.45

Request a Quote

Stock 4244

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
FGHL25T120RWD
onsemi
1200V, 25A TRENCH FIELD STOP VII
STGWA30IH160DF2
STMicroelectronics
TRENCH GATE FIELD-STOP 1600 V, 3
MIZ75N65AH2Y-BP
IGBT DISCRETE,TO-247-4
GH50H65DRB2-7AG
STMicroelectronics
IGBT
GWA75H65DRFB2AG
STMicroelectronics
IGBT
RJH60D1DPP-A0#T2
Renesas Electronics Corporation
POWER TRANSISTOR IGBT 600V 10A
NGW75T65M3DFPQ
Nexperia USA Inc.
NGW75T65M3DFP/SOT429-2/TO247-3
NGW75T65H3DFPQ
Nexperia USA Inc.
NGW75T65H3DFP/SOT429-2/TO247-3
NGW40T65H3DHPQ
Nexperia USA Inc.
NGW40T65H3DHP/SOT429-2/TO247-3
NGW30T65M3DFPQ
Nexperia USA Inc.
NGW30T65M3DFP/SOT429-2/TO247-3
Specifications
Mounting Type
Through Hole
Part Status
Active
Grade
-
Qualification
-
Package / Case
TO-247-3
Input Type
Standard
Operating Temperature
-40°C ~ 175°C (TJ)
Current - Collector Pulsed (Icm)
300 A
Supplier Device Package
TO-247
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
150 A
IGBT Type
Trench Field Stop
Vce(on) (Max) @ Vge, Ic
1.85V @ 15V, 75A
Reverse Recovery Time (trr)
123 ns
Test Condition
400V, 75A, 10Ohm, 15V
Power - Max
394 W
Switching Energy
1.56mJ (on), 1.07mJ (off)
Gate Charge
184 nC
Td (on/off) @ 25°C
35ns/194ns